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DAC EB FIB
DAC(Digital to Analog Convertor), EB(Electron Beam), FIB(Focused Ion Beam)
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Introduction
Having continued to grow as a manufacturer of weighing and measuring instruments, A&D is now going further with active challenges to up-and-coming businesses using unique technological skills accumulated over almost three decades.
In recent years, A&D has especially focused on A/D and D/A conversion devices and electron beam businesses supporting semiconductor development.
Offering Miniaturization Technologies for Semiconductor Processing and Controlling
Semiconductor integrated circuits such as microprocessors and computer memories are constantly required to offer more capacity and to achieve further miniaturization. For this reason, light source used in lithography is shifting toward an electron beam radiated from an electron gun with a shorter wavelength than that of the common laser beam. A&D started developing electron guns early on and successfully developed those offering top of the range high voltage output and excellent stability operation rate. In addition, this technology has prospects for use in DVD mastering and is currently used with ion guns for surface analysis.
Furthermore, A&D has the advantage having developed peripheral circuitries to control electron beam. The A/D and D/A conversion technologies that A&D is extremely proud of are currently applied to ultra high-speed, highly accurate D/A converters (DAC) for beam deflection circuits to control the direction of electron beam radiation. A&D’s blanking circuits for controlling beam radiation intervals and lens aligner for controlling beam diameter, etc. are also highly recommended by professionals in the industry.
DAC Business
DAC requirements are becoming tougher and tougher due to ongoing competition in the miniaturization of semiconductors. An example of this is A&D’s ±320V output with 20-bit accuracy at 10µS stabilization time.
The contradicting factors of accuracy and speed are a major issue because the positioning error of an electron beam affects pattern writing accuracy but high-speed performance is required to increase throughput.
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A) Main deflection amplifier
Specifications |
Model AD-199-5 |
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| Output voltage |
±400V max |
| Settling Time |
60 µS (Full Swing) |
| Resolution |
18-bit |
| Linearity |
±1/2LSB (17-bit) |
| Temperature Coefficient |
< ±8ppm/2°C, 1 hr |
| Noise |
< ±1LSB |
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B) Sub deflection amplifier
Specifications |
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| Output voltage |
±37.5V max. (POS, NEG) |
| Settling Time |
50 nS less |
| Resolution |
12-bit |
| Linearity |
±1/2LSB (12-bit) |
| Temperature Coefficient |
< ±100ppm/2°C, 1 hr |
| Noise |
< ±1LSB |
| Permissible Load |
< 30 PF |
| Output Offset |
Within ±3.2% of FS |
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Model AD-199-3 |
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C) Lens and Aligner
Specifications
Lens out : 4 ch |
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| Output Current |
±2 A |
| Stability |
< ±1ppm |
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Aligner out : 4 ch |
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| Output Current |
±2 A |
| Stability |
< ±10ppm |
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EBL(Electron Beam Lithography) Column Business
A&D provides the key component unit of a 50 kV electron beam column, with high-voltage unit and column control units, developed to meet the standards of ultra-high accuracy for MASK /RETICLES fabrication.
Electron Beam Llithography offers higher patterning resolution with the shorter wavelength possessed by its 50 kV electrons.
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50 kV EBL column
Specifications |
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| Accelerating voltage |
50kV |
| Column |
3-lens EOS |
| Electron gun emitter |
ZrO/W (Schottky) |
| Electron beam diameter |
<20nm@15nA |
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FIB Column Business
The Focused Ion Beam (FIB) system responds to various needs, ranging from high-resolution observation and processing of various materials to fabrication of various types of samples.
Focused Ion Beam technology makes it possible to locally sputter materials by milling a sample surface with highly focused gallium ions.
FIB systems are widely utilized for:
- One chip circuit modification
- Defect characterization (TEM/SEM sample preparation)
- Micro machining
- Secondary Ionization Mass Spectrometer (SIMS)
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30 kV FIB column
Specifications |
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| Accelerating voltage |
5 ~ 30kV |
| Column |
2-lens IOS |
| Ion beam emitter |
Ga LMIS |
| Beam image resolution |
4nm@30kV |
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Terms and Conditions